Micron’s Next NAND Is G11, Not G10: 400-Plus Layers, 2x Density, and a 512TB SSD Ceiling on a 2H 2027 Ramp
Micron’s next NAND node is G11, with no G10 between it and the G9 flash in its SSDs today. The density chart in the deck for Micron’s October 21 technology webinar runs G7, G8, G9, G11, and Scott DeBoer, the company’s president and chief technology and products officer, framed the skipped number as a statement about the size of the step. What the jump offers is significant: wafer-on-wafer bonding, more than 400 layers, roughly twice the bit density of G9, up to 1.5x the I/O speed, and more than 25 percent less data-transfer energy per bit, with a volume ramp in the second…
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